| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC636-10 | PNP medium power transistors | Philips-Semiconductors | SOT54 | - | - | - | 43 K |
| BC636-10 | PNP medium power transistors | Philips-Semiconductors | SOT54 | - | - | - | 43 K |
| BCP56-10 | NPN medium power transistors | Philips-Semiconductors | SOT223 | - | - | - | 43 K |
| BD136-10 | PNP power transistors | Philips-Semiconductors | SOT32 | - | - | - | 44 K |
| TIBPAL16R6-10CFN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | FN | 20 | - | - | 210 K |
| TIBPAL16R6-10CN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | N | 20 | - | - | 210 K |
| TIBPAL16R6-10MFKB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | FK | 20 | -55°C | 125°C | 215 K |
| TIBPAL16R6-10MJB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | J | 20 | -55°C | 125°C | 215 K |
| TIBPAL16R6-10MWB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | W | 20 | -55°C | 125°C | 215 K |
| TIBPAL20R6-10CFN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | FN | 28 | - | - | 212 K |
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