| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MAX7645B/D | TTL/CMOS compatible for Vdd = 15V, 12-bit buffered multiplying DAC. Gain error +-3 LSB. | Maxim-Integrated-Producs | Dice | - | 0°C | 70°C | 516 K |
| MAX7645BCPP | TTL/CMOS compatible for Vdd = 15V, 12-bit buffered multiplying DAC. Gain error +-3 LSB. | Maxim-Integrated-Producs | Plastic DIP | 20 | 0°C | 70°C | 516 K |
| MAX7645BCQP | TTL/CMOS compatible for Vdd = 15V, 12-bit buffered multiplying DAC. Gain error +-3 LSB. | Maxim-Integrated-Producs | PLCC | 20 | 0°C | 70°C | 516 K |
| MAX7645BCWP | TTL/CMOS compatible for Vdd = 15V, 12-bit buffered multiplying DAC. Gain error +-3 LSB. | Maxim-Integrated-Producs | Wide SO | 20 | 0°C | 70°C | 516 K |
| MAX7645BEJP | TTL/CMOS compatible for Vdd = 15V, 12-bit buffered multiplying DAC. Gain error +-3 LSB. | Maxim-Integrated-Producs | CERDIP | 20 | -40°C | 85°C | 516 K |
| MAX7645BMJP | TTL/CMOS compatible for Vdd = 15V, 12-bit buffered multiplying DAC. Gain error +-3 LSB. | Maxim-Integrated-Producs | CERDIP | 20 | -55°C | 125°C | 516 K |
| MH16V645BWJ-5 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 127 K |
| MH16V645BWJ-5 | 1073741824-bit (16777216-word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 127 K |
| MP7645B | CMOS Buffered Multiplying 12-Bit Digital-to-Analog Converter | Exar | - | - | - | - | 80 K |
| PBYR1645B | Rectifier diodes Schottky barrier | Philips-Semiconductors | SOT404 | - | - | - | 37 K |
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