| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTW6N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 195 K |
| NM27C256N100 | 256K-Bit (32K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 110 K |
| NM27C256N100 | 256K-Bit (32K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 110 K |
| PHD6N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 70 K |
| PHP26N10E | PowerMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 71 K |
| STD6N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 171 K |
| STH6N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STH6N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP16N10L | N-CHANNEL 100V - 0.14 OHM - 16A - TO-220 POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| STP16N10L | N-CHANNEL 100V - 0.14 OHM - 16A - TO-220 POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
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