| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MH16V725BATJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 149 K |
| MH16V725BATJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 149 K |
| MH16V725BWJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 129 K |
| MH16V725BWJ-5 | 1207959552-bit (16777216-word by 72-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 129 K |
| MH16V725BWJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 129 K |
| MH16V725BWJ-6 | 1207959552-bit (16777216-word by 72-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 129 K |
| MH32V725BST-5 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 135 K |
| MH32V725BST-6 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 135 K |
| MH8V725BAZTJ-5 | 603979776-bit (8388608-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 147 K |
| MH8V725BAZTJ-6 | 603979776-bit (8388608-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 147 K |
| 1 [2] |
|---|
