| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D2587P36 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.6 THz. Center wavelength 1548.51 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| D2587P365 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.65 THz. Center wavelength 1548.11 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| D2587P37 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.7 THz. Center wavelength 1547.72 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| D2587P37 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.7 THz. Center wavelength 1547.72 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| D2587P38 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.8 THz. Center wavelength 1546.92 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| D2587P385 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.85 THz. Center wavelength 1546.52 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| D2587P39 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.9 THz. Center wavelength 1546.12 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| D2587P395 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.95 THz. Center wavelength 1545.72 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| KS57P3204 | Single-chip CMOS microcontroller, OTP version | Samsung-Electronic | QFP | 64 | -40°C | 85°C | 306 K |
| KS57P3316 | Single-chip CMOS microcontroller, OTP version | Samsung-Electronic | QFP | 80 | -40°C | 85°C | 361 K |
| 1 [2] [3] [4] |
|---|
