Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXFK180N07 | 70V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 48 K |
IXFN180N07 | 70V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 188 K |
IXFN280N07 | 70V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 102 K |
IXFX180N07 | 70V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 48 K |
PHB80N06LT | TrenchMOS transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 71 K |
PHB80N06T | TrenchMOS transistor Standard level FET | Philips-Semiconductors | SOT404 | - | - | - | 70 K |
STP80N03L-06 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
STP80N05-09 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 114 K |
STP80N06-10 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
STW80N06-10 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
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