| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| A2W005G | 50 V, 2 A Avalanche glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 150°C | 18 K |
| A2W01G | 100 V, 2 A Avalanche glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 150°C | 18 K |
| A2W02G | 200 V, 2 A Avalanche glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 150°C | 18 K |
| A2W04G | 400 V, 2 A Avalanche glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 150°C | 18 K |
| A2W06G | 600 V, 2 A Avalanche glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 150°C | 18 K |
| A2W08G | 800 V, 2 A Avalanche glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 150°C | 18 K |
| A2W10G | 1000 V, 2 A Avalanche glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 150°C | 18 K |
| LNA2W01L | GaAs Infrared Light Emitting Diodes | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 44 K |
| PNA2W01M | Darlington Phototransistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 38 K |
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