| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MA4S159 | Silicon epitaxial planer type switching diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA4S713 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| PNA4S01M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| PNA4S02M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| PNA4S03M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| PNA4S04M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| PNA4S11M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| PNA4S12M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| PNA4S13M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| PNA4S14M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
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