| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT7200LA50TDB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 152 K |
| IDT7200LA50TPB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 152 K |
| IDT7201LA50TDB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 152 K |
| IDT7201LA50TPB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 152 K |
| IDT7202LA50TDB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 152 K |
| IDT7202LA50TPB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 152 K |
| STD2NA50T4 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 98 K |
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