| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1617AB35 | 35 W, 25 V, 1600-1700 MHz common emitter transistor | distributor | 55AR | 3 | - | - | 488 K |
| 1819AB35 | 35 W, 25 V, 1808-1880 MHz common emitter transistor | distributor | 55AR | 3 | - | - | 417 K |
| 1920AB35 | 35 W, 25 V, 1930-1990 MHz common emitter transistor | distributor | 55AR | 3 | - | - | 416 K |
| AB380-C1000G | 900 V, 1.0 A Avalanche glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 125°C | 22 K |
| AB380-C1500RG | 900 V, 1.5 A Avalanche glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 125°C | 45 K |
| ESAB33(CS) | Fast recovery diode | distributor | - | 3 | -40°C | 150°C | 69 K |
| ESAB34(C) | Fast recovery diode | distributor | - | 3 | -40°C | 150°C | 69 K |
| SMAB33 | Schottky Barrier Diode | Korea-Electronics-Co--Ltd- | - | - | - | - | 382 K |
| SMAB34 | Schottky Barrier Diode | Korea-Electronics-Co--Ltd- | - | - | - | - | 382 K |
| SMAB36 | Schottky Barrier Diode | Korea-Electronics-Co--Ltd- | - | - | - | - | 382 K |
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