| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256ASC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C256ASC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C256ASC-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C256ASC-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C64ASC-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | SOIC | 28 | 0°C | 70°C | 42 K |
| 28C64ASC-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | SOIC | 28 | 0°C | 70°C | 42 K |
| 28C64ASC-3 | High speed 200 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | SOIC | 28 | 0°C | 70°C | 42 K |
| 28C64ASC-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | SOIC | 28 | 0°C | 70°C | 42 K |
| G17ASC-DC12 | Relay. Nominal voltage 12VDC. Resistance(+-10%) 130W. Contact material AgMeO1. Contact arrangement: 1 form A. Sealed. | distributor | - | 4 | -40°C | 85°C | 63 K |
| G17ASC-DC6 | Relay. Nominal voltage 6VDC. Resistance(+-10%) 28W. Contact material AgMeO1. Contact arrangement: 1 form A. Sealed. | distributor | - | 4 | -40°C | 85°C | 63 K |
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