| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ASAT30 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 16 K |
| AT302S08 | 800 V, 995 A, 12 kA phase control thyristor | distributor | - | 2 | -30°C | 150°C | 43 K |
| AT303S08 | 800 V, 1100 A, 12 kA phase control thyristor | distributor | - | 2 | -30°C | 150°C | 43 K |
| BAT30 | Silicon schottky diode | Infineon-formely-Siemens | S1 | 2 | -55°C | 150°C | 247 K |
| THAT300P | Low-noise matched transistor array IC | THAT-Corporation | DIP | 14 | 0°C | 70°C | 91 K |
| THAT300S | Low-noise matched transistor array IC | THAT-Corporation | SO | 14 | 0°C | 70°C | 91 K |
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