Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
SB50-09 | Schottky barrier diode, 90V/5A rectifier | SANYO-Electric-Co--Ltd- | 1159A | 3 | - | - | 73 K |
SB50-09J | Schottky barrier diode, 90V/5A rectifier | SANYO-Electric-Co--Ltd- | 1178 | 3 | - | - | 73 K |
SB50-18 | Schottky barrier diode, 180V/5A rectifier | SANYO-Electric-Co--Ltd- | 1159B | 3 | - | - | 74 K |
SB50-18K | Schottky barrier diode, 180V/5A rectifier | SANYO-Electric-Co--Ltd- | 1199B | 3 | - | - | 73 K |
STD2NB50-1 | N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 451 K |
VHB50-28F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
VHB50-28S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
VUB50-12PO1 | 1200V three phase rectifier bridge | distributor | - | 18 | -40°C | 150°C | 48 K |
VUB50-12PO1 | 1200V three phase rectifier bridge | distributor | - | 18 | -40°C | 150°C | 48 K |
VUB50-16PO1 | 1600V three phase rectifier bridge | distributor | - | 18 | -40°C | 150°C | 48 K |
1 [2] [3] [4] |
---|