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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| HYB511000BJ-50 | 1M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 192 K |
| HYB511000BJ-60 | 1M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 192 K |
| HYB511000BJ-70 | 1M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 192 K |
| HYB511000BJL-50 | 1M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 192 K |
| HYB511000BJL-60 | 1M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 192 K |
| HYB511000BJL-70 | 1M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 192 K |
| HYB5116160BSJ-50 | 1M x 16-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 272 K |
| HYB5116160BSJ-60 | 1M x 16-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 272 K |
| HYB5116160BSJ-70 | 1M x 16-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 272 K |
| HYB5116400BJ-50 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 325 K |
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