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B8N

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQB8N25250V N-Channel MOSFETFairchild-Semiconductor----593 K
MTB8N50ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C162 K
PHB8ND50E500 V, power MOS transistor FREDFET, avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C73 K
STB8NA50N-CHANNEL ENHANCEMENT FAST MODE POWER MOS TRANSISTORSGS-Thomson-Microelectronics----129 K
STB8NC50N-CHANNEL 500V 0.7 OHM 8A D2PAK POWERMESH II MOSFETSGS-Thomson-Microelectronics----441 K
STB8NC50-1N-CHANNEL 500V - 0.7 OHM - 8A TO-220/TO-220FP/I2PAK POWERMESH II MOSFETSGS-Thomson-Microelectronics----352 K
STB8NC70ZN-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFETSGS-Thomson-Microelectronics----532 K
STB8NC70Z-1N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFETSGS-Thomson-Microelectronics----532 K
STB8NC70ZT4N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFETSGS-Thomson-Microelectronics----532 K
STB8NS25N-CHANNEL 250V 0.38 OHM 8A D2PAK MESH OVERLAY MOSFETSGS-Thomson-Microelectronics----427 K
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