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BF30

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFBF30HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 3.6AInternational-Rectifier-3-55°C150°C166 K
IRFIBF30GHEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 1.9AInternational-Rectifier-3-55°C150°C167 K
IRGBF30FInsulated gate bipolar transistorInternational-Rectifier-3-55°C150°C253 K
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