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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CEBLZ44N-channel enhancement mode field effect transistorChino-Excel-Technology-Corporation-3-65°C175°C511 K
HM514400BLZ-61,048,576-word x 4-bit dynamic random access memory, 60nsdistributorZIP200°C70°C235 K
HM514400BLZ-71,048,576-word x 4-bit dynamic random access memory, 70nsdistributorZIP200°C70°C235 K
HM514400BLZ-81,048,576-word x 4-bit dynamic random access memory, 80nsdistributorZIP200°C70°C235 K
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