| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSN10 | 50 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | - | 3 | - | - | 76 K |
| BSN20 | N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT23 | - | - | - | 101 K |
| BSN205 | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | - | 3 | - | - | 50 K |
| BSN205A | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | - | 3 | - | - | 50 K |
| BSN254 | N-channel enhancement mode vertical D-MOS transistors | Philips-Semiconductors | SOT54 | - | - | - | 75 K |
| BSN254A | N-channel enhancement mode vertical D-MOS transistors | Philips-Semiconductors | SOT54 | - | - | - | 75 K |
| BSN304 | N-channel enhancement mode vertical D-MOS transistors | Philips-Semiconductors | SOT54 | - | - | - | 88 K |
| BSN304A | N-channel enhancement mode vertical D-MOS transistors | Philips-Semiconductors | SOT54 | - | - | - | 88 K |
| G17BSNil-DC12 | Relay. Nominal voltage 12VDC. Resistance(+-10%) 130W. Contact material AgNi. Contact arrangement: 1 form B. Sealed. | distributor | - | 4 | -40°C | 85°C | 63 K |
| G17BSNil-DC24 | Relay. Nominal voltage 24VDC. Resistance(+-10%) 520W. Contact material AgNi. Contact arrangement: 1 form B. Sealed. | distributor | - | 4 | -40°C | 85°C | 63 K |
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