Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
BSX19 | 360mW NPN silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 95 K |
BSX20 | 360mW NPN silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 95 K |
BSX20 | 40 V, NPN switching transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 53 K |
BSX20 | hfe min 40 Transistor polarity NPN Current Ic fall time measurement 10 mA Current Ic continuous max 0.5 A Voltage Vce sat max 0.25 V Voltage Vceo 15 V Current Ic @ Vce sat 10 mA Time fall @ Ic 18 ns | SGS-Thomson-Microelectronics | - | - | - | - | 65 K |
BSX45 | 80 V, NPN medium power transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 53 K |
BSX46 | 100 V, NPN medium power transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 53 K |
BSX59 | 70 V, NPN switching transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 51 K |
BSX61 | 70 V, NPN switching transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 51 K |
BSX62 | 60 V, NPN switching transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 51 K |
BSX63 | 80 V, NPN switching transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 51 K |
1 [2] |
---|