| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM29LV116BT-80REEB | 16 megabit CMOS 3.0 volt-only, boot sector flash memory | AMD-Advanced-Micro-Devices | TSOP | 40 | -55°C | 125°C | 544 K |
| AM29LV116BT-80REI | 16 megabit CMOS 3.0 volt-only, boot sector flash memory | AMD-Advanced-Micro-Devices | TSOP | 40 | -40°C | 85°C | 544 K |
| AM29LV116BT-80REIB | 16 megabit CMOS 3.0 volt-only, boot sector flash memory | AMD-Advanced-Micro-Devices | TSOP | 40 | -40°C | 85°C | 544 K |
| AM29LV116BT-80REIB | 16 megabit CMOS 3.0 volt-only, boot sector flash memory | AMD-Advanced-Micro-Devices | TSOP | 40 | -40°C | 85°C | 544 K |
| HYB39S16160BT-8 | 16Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 929 K |
| HYB39S16400BT-8 | 16Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 44 | 0°C | 70°C | 929 K |
| HYB39S16800BT-8 | 16Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 44 | 0°C | 70°C | 929 K |
| LC321664BT-80 | 1 MEG (65536 words x 16 bit) DRAM fast page mode, byte write | SANYO-Electric-Co--Ltd- | TSOP40 | 40 | 0°C | 70°C | 583 K |
| LC321667BT-80 | 1 MEG (65536 words x 16 bit) DRAM EDO page mode, byte write | SANYO-Electric-Co--Ltd- | TSOP40 | 40 | 0°C | 70°C | 624 K |
| MN4SV17160BT-80 | 16M bit sinchronous dynamic RAM, 524288-word x 16 bit x 2 bank, 2048 refresh, 125MHz clock frequency | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | TSOP | 50 | 0°C | 70°C | 2 M |
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