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C10K

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C158 K
IRG4BC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C210 K
IRG4RC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C134 K
IRG4RC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C134 K
IRG4RC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C190 K
IRG4RC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C190 K
SD300OC10KStandard recovery diodeInternational-Rectifier-2-40°C180°C171 K
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