Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
1.4KESD18C | Transient Voltage Suppressor | Microsemi-Corporation | - | - | - | - | 109 K |
1.5KCD18C | Transient Voltage Suppressor | Microsemi-Corporation | CELLULAR_DIE | - | - | - | 123 K |
1.5KCD18CA | Transient Voltage Suppressor | Microsemi-Corporation | CELLULAR_DIE | - | - | - | 123 K |
GS8170DD18C-250 | 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 825 K |
GS8170DD18C-250I | 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
GS8170DD18C-300I | 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
GS8170DD18C-333I | 333MHz 1M x 18 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
RN5VD18CA-TL | Voltage detector with output delay. Detector threshold 1.8V. Output type CMOS. Taping type TL | distributor | - | 5 | -40°C | 85°C | 198 K |
RN5VD18CA-TR | Voltage detector with output delay. Detector threshold 1.8V. Output type CMOS. Standard taping type TR | distributor | - | 5 | -40°C | 85°C | 198 K |
RN5VD18CC | Voltage detector with output delay. Detector threshold 1.8V. Output type CMOS. Antistatic bag for samples | distributor | - | 5 | -40°C | 85°C | 198 K |
1 [2] |
---|