Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SD2345 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 38 K |
73D2348 | Modem device set | TDK-Semiconductor-Corporation | PLCC | 28 | - | - | 55 K |
BD234 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 37 K |
BD234 | SILICON PNP TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 62 K |
FAR-F5CE-902M50-D234-W | Piezoelectric SAW BPF (700 to 1000 MHz) | Fujitsu-Microelectronis | SMT | 6 | -30°C | 85°C | 198 K |
FAR-F5CE-902M50-D234-V | Piezoelectric SAW BPF(700 to 1000 MHz) | Fujitsu-Microelectronis | SMT | 6 | -30°C | 85°C | 198 K |
FAR-F5CE-902M50-D234-U | Piezoelectric SAW BPF(700 to 1000 MHz) | Fujitsu-Microelectronis | SMT | 6 | -30°C | 85°C | 198 K |
QED234 | PLASTIC INFRARED LIGHT EMITTING DIODE | Fairchild-Semiconductor | - | - | - | - | 84 K |
QED234 | Plastic Infrared Light Emitting Diode. 940 nm GaAs | distributor | - | - | - | - | 149 K |
SLD234VL | Index-Guided High Power AlGaAs Laser Diode | Sony-Semiconductor | - | - | - | - | 51 K |
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