Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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PHB6ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
PHB8ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
PHP6ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
PHP6ND50E | PowerMOS transistor. FREDFET, avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 78 K |
PHP6ND50E | PowerMOS transistor. FREDFET, avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 78 K |
PHP8ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
PHP8ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
PHW8ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
PHX6ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 60 K |
PHX8ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 61 K |
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