| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQD6N15 | 150V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 757 K |
| HGTD6N40E1 | 6A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 32 K |
| HGTD6N40E1S | 6A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 32 K |
| HGTD6N50E1 | 6A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 32 K |
| HGTD6N50E1S | 6A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 32 K |
| MTD6N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 211 K |
| MTD6N20E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 269 K |
| PHD6N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 70 K |
| PHD6N10E | 100 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 57 K |
| STD6N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 171 K |
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