| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQD9N08 | 80V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 536 K |
| FQD9N08L | 80V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 543 K |
| FQD9N15 | 150V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 764 K |
| FQD9N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 724 K |
| MTD9N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 257 K |
| PHD9NQ20T | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 110 K |
| PHD9NQ20T | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 115 K |
| STD9N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 129 K |
| STD9N10L | N-CHANNEL 100V - 0.22 OHM - 9A IPAK/DPAK POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
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