| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FDD3670 | 100V N-Channel PowerTrench® MOSFET [Advanced] | Fairchild-Semiconductor | - | - | - | - | 167 K |
| FDD3672 | N-Channel UltraFET ® Trench MOSFET 100V, 44A, 28mOhm | Fairchild-Semiconductor | - | - | - | - | 233 K |
| FDD3680 | 100V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 75 K |
| FDD3682 | N-Channel UltraFET ® Trench MOSFET 100V, 32A, 36mOhm | Fairchild-Semiconductor | - | - | - | - | 266 K |
| GS8170DD36C-250 | 250MHz 512K x 36 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
| GS8170DD36C-250I | 250MHz 512K x 36 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
| GS8170DD36C-300 | 300MHz 512K x 36 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
| GS8170DD36C-300I | 300MHz 512K x 36 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
| GS8170DD36C-333 | 333MHz 512K x 36 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
| GS8170DD36C-333I | 333MHz 512K x 36 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
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