Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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DSA015 | Silicon epitaxial planar type, high-speed switching diode | SANYO-Electric-Co--Ltd- | 1149 | 3 | - | - | 48 K |
DSA10 | Diffused junction type silicon diode, 1,0A power diode | SANYO-Electric-Co--Ltd- | 1005 | 2 | - | - | 40 K |
DSA12T | Diffused junction type silicon diode, 1,2A power rectifier | SANYO-Electric-Co--Ltd- | 1083 | 2 | - | - | 50 K |
DSA17 | Diffused junction type silicon diode, 1,7A power rectifier | SANYO-Electric-Co--Ltd- | 1085 | 2 | - | - | 46 K |
DSA20T | Diffused junction type silicon diode, 2,0A power rectifier | SANYO-Electric-Co--Ltd- | 1176 | 2 | - | - | 49 K |
DSA26 | Diffused junction type silicon diode, 2,6A power rectifier | SANYO-Electric-Co--Ltd- | 1086 | 2 | - | - | 51 K |
PM200DSA060 | 200 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 66 K |
PM300DSA060 | 300 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 64 K |
PM400DSA060 | 400 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 63 K |
PM600DSA060 | 600 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 62 K |
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