| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| COP87L88RDV-XE | 8-Bit CMOS OTP Microcontrollers with 16k or 32k Memory and 8-Channel A/D with Prescaler | distributor | PLCC(MCM) | 44 | - | - | 422 K |
| FG3000DV-90DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 72 K |
| FG3000DV-90DA | 4500V, 3000A phase control asymmetrical thyristor | distributor | - | - | - | - | 78 K |
| LP621024DV-55LLI | 55ns 70mA 128K x 8bit CMOS SRAM | distributor | TSOP | 32 | 0°C | 70°C | 192 K |
| LP621024DV-55LLT | 55ns; operating current:70mA; standby current:50uA; 128 x 8bit CMOS SRAM | distributor | TSOP | 32 | 0°C | 70°C | 184 K |
| LP621024DV-70LLT | 70ns; operating current:70mA; standby current:50uA; 128 x 8bit CMOS SRAM | distributor | TSOP | 32 | 0°C | 70°C | 184 K |
| S-80731AN-DV-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80731AN-DV-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80731AN-DV-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80831ANNP-EDV-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
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