| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM100DY-12H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| CM150DY-12H | 150 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| CM50DY-12H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 48 K |
| CM75DY-12H | 75 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 48 K |
| ICS8530DY-01 | Low skew 1 to 16 differential to 3.3V LVPECL fanout buffer | distributor | LQFP | 48 | 0°C | 70°C | 125 K |
| ICS8530DY-01T | Low skew 1 to 16 differential to 3.3V LVPECL fanout buffer | distributor | LQFP | 48 | 0°C | 70°C | 125 K |
| S-80734AN-DY-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80734AN-DY-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80734AN-DY-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80834ANNP-EDY-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
