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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K6T1008C2E-GB55128Kx8 bit, 55ns low low power CMOS static RAMSamsung-ElectronicSOP320°C70°C190 K
K6T1008C2E-GB70128Kx8 bit, 70ns low low power CMOS static RAMSamsung-ElectronicSOP320°C70°C190 K
K6T1008C2E-GF55128Kx8 bit, 55ns low low power CMOS static RAMSamsung-ElectronicSOP32-40°C85°C190 K
K6T1008C2E-GF70128Kx8 bit, 70ns low low power CMOS static RAMSamsung-ElectronicSOP32-40°C85°C190 K
K6T1008C2E-GL55128Kx8 bit, 55ns low power CMOS static RAMSamsung-ElectronicSOP320°C70°C190 K
K6T1008C2E-GL70128Kx8 bit, 70ns low power CMOS static RAMSamsung-ElectronicSOP320°C70°C190 K
K6T1008C2E-GP55128Kx8 bit, 55ns low power CMOS static RAMSamsung-ElectronicSOP32-40°C85°C190 K
K6T1008C2E-GP70128Kx8 bit, 70ns low power CMOS static RAMSamsung-ElectronicSOP32-40°C85°C190 K
M38250EE-GPRAM size: 192 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupQFP100-20°C85°C994 K
M38251EE-GPRAM size: 256 bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupQFP100-20°C85°C994 K
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