| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HMJE2955T | Emitter to base voltage:5V; 10A PNP epitaxial planar transistor for general purpose of amplifier and switching applications | distributor | - | 3 | - | - | 38 K |
| KSE2955T | PNP Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 38 K |
| MJE2955T | PNP Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 37 K |
| MJE2955T | 60V complementary silicon power transistor | distributor | - | 3 | -55°C | 150°C | 123 K |
| MJE2955T | Complementary silicon plastic power transistor | Motorola | - | 4 | -65°C | 150°C | 129 K |
| MJE2955T | Complementary Silicon Plastic Power Transistors | ON-Semiconductor | - | 3 | - | - | 129 K |
| MJE2955T | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 65 K |
| MJE2955T | PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. | distributor | - | 3 | -65°C | 150°C | 48 K |
| MJE2955T | PNP planar silicon transistor. Audio power amplifier, DC to DC converter. Vcbo=-60V, Vceo=-60V, Vebo=-6V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 47 K |
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