Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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NE5205AD | Wide-band high-frequency amplifier | Philips-Semiconductors | DE | - | - | - | 114 K |
NE5205AD | Wide-band high-frequency amplifier. | Philips-Semiconductors | - | 8 | 0°C | 70°C | 190 K |
NE5205AD | Wide-band high-frequency amplifier. | Philips-Semiconductors | SO | 8 | 0°C | 70°C | 190 K |
NE5205AN | Wide-band high-frequency amplifier | Philips-Semiconductors | NE | - | - | - | 114 K |
NE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | DIP | 8 | 0°C | 70°C | 190 K |
NE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | - | 8 | 0°C | 70°C | 190 K |
NTE5205A | Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 39V. Zener test current Izt = 65mA. | distributor | DO4 | 2 | -65°C | 175°C | 30 K |
SE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | - | 8 | -55°C | 125°C | 190 K |
SE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | DIP | 8 | -55°C | 125°C | 190 K |
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