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E66

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4E660412D-JC/L16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle.Samsung-ElectronicSOJ320°C70°C415 K
K4E660412D-TC/L16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle.Samsung-ElectronicTSOP (II)320°C70°C415 K
K4E660812B-TC-458M x 8bit CMOS dynamic RAM with extended data out, 45nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E660812B-TC-58M x 8bit CMOS dynamic RAM with extended data out, 50nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E660812B-TC-68M x 8bit CMOS dynamic RAM with extended data out, 60nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E660812B-TC-68M x 8bit CMOS dynamic RAM with extended data out, 60nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E660812B-TCL-458M x 8bit CMOS dynamic RAM with extended data out, 45nsSamsung-ElectronicTSOP II320°C70°C416 K
K4E660812B-TCL-58M x 8bit CMOS dynamic RAM with extended data out, 50nsSamsung-ElectronicTSOP II320°C70°C416 K
NE661M04NPN epitaxial silicon transistorNEC-Electronics-Inc-----70 K
NE661M04-T2NPN epitaxial silicon transistorNEC-Electronics-Inc-----70 K
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