Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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F1040 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 32 K |
MBRF1040 | 10A, 40V ultra fast recovery rectifier | distributor | - | - | - | - | 99 K |
MBRF1040 | 10A, 40V ultra fast recovery rectifier | distributor | - | - | - | - | 99 K |
MBRF1040CT | 10A, 40V ultra fast recovery rectifier | distributor | - | - | - | - | 390 K |
MURF1040CT | 10A, 400V ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
SBLF1040 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 110 K |
SRF1040 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 183 K |
SRF1040 | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. | distributor | - | 3 | -65°C | 125°C | 170 K |
SRF1040A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. | distributor | - | 3 | -65°C | 125°C | 170 K |
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