Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
F1209 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 36 K |
NMF1209D | Isolated 1W regulated single output DC-DC converter. Nom.input voltage 12V, output voltage 9V, output current 100mA, power out 900mW. | distributor | DIP | 14 | 0°C | 70°C | 116 K |
NMF1209S | Isolated 1W regulated single output DC-DC converter. Nom.input voltage 12V, output voltage 9V, output current 100mA, power out 900mW. | distributor | SIP | 7 | 0°C | 70°C | 116 K |
NMF1209S | DC/DC converter, 1 watt. Output voltage 9VDC. Output current 100mA. Input 12VDC . | distributor | - | 5 | -50°C | 125°C | 38 K |
1 |
---|