Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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EDF1BM | Miniature Glass Passivated Fast Efficient Bridge Rectifier | General-Semiconductor | DFM | - | - | - | 36 K |
EDF1BS | Miniature Glass Passivated Fast Efficient Surface Mount Bridge Rectifier | General-Semiconductor | DFS | - | - | - | 84 K |
F1B2CA | Silicon diode stack (common anode) for high speed rectifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -40°C | 150°C | 239 K |
F1B2CAI | Silicon diode stack (common anode) for high speed rectifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -40°C | 150°C | 246 K |
F1B2CC | Silicon diode stack (common cathode) for high speed rectifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -40°C | 150°C | 239 K |
F1B2CCI | Silicon diode stack (common cathode) for high speed rectifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -40°C | 150°C | 246 K |
G10F1B-DC3 | Relay. Nominal voltage 3VDC. Coil resistance(+-10%) 20W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: dust cover. | distributor | - | 5 | -30°C | 60°C | 51 K |
UF1B-T1 | Reverse voltage: 100.00V; 1.0A surface mount ultra fast rectifier | distributor | SMB | 2 | -50°C | 150°C | 50 K |
UF1B-T1 | Reverse voltage: 100.00V; 1.0A surface mount ultra fast rectifier | distributor | SMB | 2 | -50°C | 150°C | 50 K |
UF1B-T3 | Reverse voltage: 100.00V; 1.0A surface mount ultra fast rectifier | distributor | SMB | 2 | -50°C | 150°C | 50 K |
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