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F1C

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
EDF1CMMiniature Glass Passivated Fast Efficient Bridge RectifierGeneral-SemiconductorDFM---36 K
EDF1CSMiniature Glass Passivated Fast Efficient Surface Mount Bridge RectifierGeneral-SemiconductorDFS---84 K
G10F1C-DC12Relay. Nominal voltage 12VDC. Coil resistance(+-10%) 320W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: dust cover.distributor-5-30°C60°C51 K
G10F1C-DC24Relay. Nominal voltage 24VDC. Coil resistance(+-10%) 1150W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: dust cover.distributor-5-30°C60°C51 K
G10F1C-DC3Relay. Nominal voltage 3VDC. Coil resistance(+-10%) 20W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: dust cover.distributor-5-30°C60°C51 K
G10F1C-DC5Relay. Nominal voltage 5VDC. Coil resistance(+-10%) 56W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: dust cover.distributor-5-30°C60°C51 K
G10F1C-DC6Relay. Nominal voltage 6VDC. Coil resistance(+-10%) 80W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: dust cover.distributor-5-30°C60°C51 K
G10F1C-DC9Relay. Nominal voltage 9VDC. Coil resistance(+-10%) 180W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: dust cover.distributor-5-30°C60°C51 K
G70LF1C-DC3Relay. 16.5mm. Coil voltage 3VDC. 1 Form C (SPDT). Flux-free. AgCdO, 6A..distributor---30°C70°C54 K
MTDF1C02HDComplementary TMOS field effect transistorMotorolaMicro8-55°C150°C276 K
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