| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ARF360S33 | 3300 V, 290 A, 5 kA fast recovery diode | distributor | - | 2 | -30°C | 125°C | 106 K |
| IF3601 | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 91 K |
| IF3602 | Dual N-Channel silicon junction field-effect transistor | distributor | - | 8 | - | - | 92 K |
| IRF360 | HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25A | International-Rectifier | - | 3 | -55°C | 150°C | 139 K |
| IRF360 | HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25A | International-Rectifier | - | 3 | -55°C | 150°C | 139 K |
| IRF360 | HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25A | International-Rectifier | - | 3 | -55°C | 150°C | 139 K |
| UF360 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 95 K |
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