Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FDR4410 | N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | - | - | - | 220 K |
FDR4420A | Single N-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | - | - | - | - | 224 K |
FDR6580 | N-Channel 2.5V Specified PowerTrench® MOSFET [Advanced] | Fairchild-Semiconductor | - | - | - | - | 241 K |
FDR6674A | 30V N-Channel PowerTrench® MOSFET [Preliminary] | Fairchild-Semiconductor | - | - | - | - | 359 K |
FDR8305N | Dual N-Channel 2.5V Specified PowerTrench® MOSFET | Fairchild-Semiconductor | - | - | - | - | 215 K |
FDR8308P | Dual P-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | - | - | - | - | 268 K |
FDR8321L | P-Channel MOSFET With Gate Driver for Load Switch Application | Fairchild-Semiconductor | - | - | - | - | 222 K |
FDR836P | P-Channel Logic-Level Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | - | - | - | 224 K |
FDR838P | P-Channel 2.5V Specified PowerTrench® MOSFET | Fairchild-Semiconductor | - | - | - | - | 204 K |
FDR840P | P-Channel 2.5V Specified PowerTrench® MOSFET | Fairchild-Semiconductor | - | - | - | - | 237 K |
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