| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BFG403W | NPN 17 GHz wideband transistor | Philips-Semiconductors | SOT343 | - | - | - | 106 K |
| BFG410W | NPN 22 GHz wideband transistor | Philips-Semiconductors | SOT343 | - | - | - | 104 K |
| BFG425W | NPN 25 GHz wideband transistor | Philips-Semiconductors | SOT343 | - | - | - | 111 K |
| BFG480W | NPN wideband transistor | Philips-Semiconductors | - | - | - | - | 160 K |
| FG4000BX-90DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 65 K |
| FG4000CX-90DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 68 K |
| FG4000EX-50DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 72 K |
| FG4000EX-50DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 72 K |
| RFG40N10 | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 51 K |
| RFG40N10LE | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 413 K |
| RFG45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 73 K |
| 1 [2] [3] [4] [5] [6] [7] [8] |
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