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FG6

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BFG67NPN 8 GHz wideband transistorsPhilips-SemiconductorsSOT143---133 K
BFG67NPN small signal RF transistorVishay-TelefunkenSOT143---38 K
BFG67/XNPN 8 GHz wideband transistorsPhilips-SemiconductorsSOT143---133 K
BFG67/XRNPN 8 GHz wideband transistorsPhilips-SemiconductorsSOT143---133 K
FG6000AU-120DGate turn-off thyristor for high power inverter use press pack typeMitsubishi-Electric-Corporation-Semiconductor-Group-2-40°C125°C59 K
RFG60P0360A, 30V, 0.027 Ohm, P-Channel Power MOSFETsIntersil-Corporation----88 K
RFG60P05E60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFETIntersil-Corporation----94 K
RFG60P06E60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFETIntersil-Corporation----65 K
XC2V3000-4FG676IVirtex-II 1.5V field programmable gate array.distributorFine pitch BGA676-40°C100°C127 K
XC2V3000-6FG676IVirtex-II 1.5V field programmable gate array.distributorFine pitch BGA676-40°C100°C127 K
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