| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BFY280ES | HiRel NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 200°C | 121 K |
| BFY280H | HiRel NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 200°C | 121 K |
| BFY280P | HiRel NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 200°C | 121 K |
| BFY280S | HiRel NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 200°C | 121 K |
| CFY25-17 | GaAs FET | Infineon-formely-Siemens | - | 4 | - | - | 158 K |
| CFY25-20 | GaAs FET | Infineon-formely-Siemens | - | 4 | - | - | 158 K |
| CFY25-23 | GaAs FET | Infineon-formely-Siemens | - | 4 | - | - | 158 K |
| IRFY240C | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
| IRFY240CM | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 281 K |
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