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G10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BFG10/XNPN 2 GHz RF power transistorPhilips-SemiconductorsSOT143---74 K
BFG10W/XUHF power transistorPhilips-SemiconductorsSOT343---58 K
CXG1009TNHigh Isolation SPDT SwitchSony-Semiconductor----54 K
CXG1013N1.7 to 2.0GHz Low Amplifier/Down Conversion MixerSony-Semiconductor----197 K
CXG1014N1.5GHz Low Noise Amplifier/Down Conversion MixerSony-Semiconductor----184 K
CXG1015NPower Amplifier/Antenna Switch for PHSSony-Semiconductor----143 K
CXG1022TMHigh-Frequency SPDT Antenna SwitchSony-Semiconductor----76 K
CXG1027TMDriver Amplifier for TransmissionSony-Semiconductor----158 K
HGTG10N120BN35A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----81 K
HGTG10N120BND35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeIntersil-Corporation----82 K
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