| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BFG193 | NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 150°C | 48 K |
| BFG194 | PNP silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 150°C | 65 K |
| BFG196 | NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 150°C | 48 K |
| BFG198 | NPN 8 GHz wideband transistor | Philips-Semiconductors | SOT223 | - | - | - | 95 K |
| BFG19S | NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 150°C | 49 K |
| DG190 | High-Speed Drivers with JFET Switch | Intersil-Corporation | - | - | - | - | 75 K |
| DG191 | High-Speed Drivers with JFET Switch | Intersil-Corporation | - | - | - | - | 75 K |
| FMB-G19L | Schottky Barrier diode | Sanken-Electric-Co- | - | - | - | - | 36 K |
| G191C00P000 | Liquid crystal display module with built-in EL backlight | Seiko-Epson-Corporation | - | 14 | -20°C | 50°C | 1 M |
| G191D00P000 | Liquid crystal display module | Seiko-Epson-Corporation | - | 17 | -20°C | 70°C | 1 M |
| 1 [2] [3] [4] [5] [6] [7] [8] |
|---|
