Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BFG196 | NPN silicon RF transistor | Infineon-formely-Siemens | - | 4 | -65°C | 150°C | 48 K |
G1961 | Active area size:1.1x1.1mm; reverse voltage:5V; GaP photodiode. Schottky type. For analytical instruments, UV detection | distributor | - | 2 | -30°C | 80°C | 158 K |
G1962 | Active area size:2.3x2.3mm; reverse voltage:5V; GaP photodiode. Schottky type. For analytical instruments, UV detection | distributor | - | 2 | -30°C | 80°C | 158 K |
G1963 | Active area size:4.6x4.6mm; reverse voltage:5V; GaP photodiode. Schottky type. For analytical instruments, UV detection | distributor | - | 2 | -30°C | 80°C | 158 K |
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