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G4BC20FD

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC20FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0AInternational-Rectifier-3-55°C150°C222 K
IRG4BC20FD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0AInternational-RectifierDDPak3-55°C150°C222 K
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