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G4BC20U

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC20UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5AInternational-Rectifier-3-55°C150°C167 K
IRG4BC20UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5AInternational-Rectifier-3-55°C150°C236 K
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