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G4PH20K

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4PH20KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C229 K
IRG4PH20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C276 K
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