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G4ph30k

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4PH30KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10AInternational-Rectifier-3-55°C150°C161 K
IRG4PH30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10AInternational-Rectifier-3-55°C150°C212 K
IRG4PH30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10AInternational-Rectifier-3-55°C150°C212 K
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